| PART |
Description |
Maker |
| RFHA1027 |
500W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| ECJ-2VB1H104K ECJ-2VB1H103K ERJ-8GEY0R00 ERJ-8GEYJ |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| RF3931 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RF3934 |
GaN WIDE-BAND POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
| ECE-V1HA101UP RF3933TR7 EEV-TG2A101M ERJ-8GEYJ100V |
90W GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA3942 |
35W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| MAGX-000035-045000-V1 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solution...
|
| MAGX-002731-180L00 MAGX-002731-SB3PPR |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| VZM-2780C2 |
500W M-Band TWT Amplifier
|
Communications & Power Industries, Inc.
|
| UPC1688G UPC1688G-T1 UPC1688G-T2 UPC1688G-T2-A |
1100 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER MINIMOLD, 4 PIN
IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,BIPOLAR,SOT-143R,4PIN,PLASTIC
5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC 5伏，1.1 GHz的宽频带及平坦增益放大器单片
|
NEC[NEC]
NEC Electronics Corp
NEC Corp.
NEC, Corp.
|
| 3134-65M |
Pulsed Power S-Band (Si)
|
Microsemi
|
